View M6MGB321S8TP_330266.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www..com
Renesas LSIs
M6MGB/T321S8TP
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.0V-ONLY FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - MCP (micro Multi Chip Package)
Description
M6MGB/T321S8TP provides for Software Lock Release function. Usually, all memory blocks are locked and can not be programed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, can be excuted. 3.0V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Features DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max.) 8M-bit SRAM is a 1,048,576 bytes / 524,288 words SRAM 85ns (Max.) asynchronous SRAM fabricated by silicon-gate CMOS technology. Supply Voltage VCC=2.7 ~ 3.0V The M6MGB/T321S8TP is a Stacked micro Multi Chip Package (S- MCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP. M6MGB/T321S8TP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight. Ambient Temperature Package Ta=-20 ~ 85 C 52pin TSOP(Type-II), Lead pitch 0.4mm
Application
Mobile communication products
PIN CONFIGURATION (TOP VIEW)
A15 A14 A13 A12 A11 A10 A9 A8 A19 S-CE1# WE# F-RP# F-WP# S-VCC S-CE2 F-RY/BY# A20 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 A16 BYTE# S-UB# GND S-LB# DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 F-VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# GND F-CE# A0
www..com
M6MGB/T321S8TP
10.79 mm
10.49 mm
F-VCC S-VCC GND A-1-A18 A19-A20 DQ0-DQ15 F-CE# S-CE#,S-CE2 OE# WE# F-WP# F-RP# F-RY/BY# BYTE# S-LB# S-UB# :Vcc for Flash :Vcc for SRAM :GND for Flash/SRAM :Flash/SRAM common Address :Address for Flash :Data I/O :Flash Chip Enable :SRAM Chip Enable :Flash/SRAM Output Enable :Flash/SRAM Write Enable :Flash Write Protect :Flash Reset Power Down :Flash Ready/Busy :Flash/SRAM Byte Enable :SRAM Lower Byte :SRAM Upper Byte
Outline 52PTG-A
Rev.3.0_48a_abbz
www..com www..com 4U
1
www..com
Renesas LSIs
M6MGB/T321S8TP
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.0V-ONLY FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - MCP (micro Multi Chip Package)
MCP Block Diagram
F-Vcc
1) 1)
GND
A0 to A20 F-RY/BY#
32Mbit DINOR Flash Memory
A0 to A20 F-CE# F-WP# F-RP# BYTE#
S-Vcc A0 to A18 WE# OE# S-UB# S-LB# S-CE1# S-CE2
1)
1)
DQ0 to DQ15
www..com
8Mbit SRAM
Note 1): In case of x8 organization, A-1 is added, and only Lower Byte data(DQ0 to DQ7) are assigned to I/O and Upper Byte data(DQ8 to DQ15) are High-Z. Note 2): In the data sheet there are "VCC"s which mean "F-VCC" or "S-VCC". In the SRAM part there are "UB#" and "LB#" which mean "S-UB#" and "S-UB#", respectively.
Capacitance
Symbol CIN COUT Parameter Input A20-A0, OE#, WE#, F-CE#, F-WP#, F-RP#, capacitance S-CE1#, S-CE2, BYTE#, S-LB#, S-UB# Output Capacitance DQ15-DQ0,F-RY/BY# Conditions Ta=25 C, f=1MHz, Vin=Vout=0V Min. Limits Typ. Max. 18 22 Unit pF pF
2
Rev.3.0_48a_abbz
www..com www..com 4U
www..com
Renesa LSIs
M6MGB/T321S8TP
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.0V-ONLY FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - MCP (micro Multi Chip Package)
www..com
Nippon Bldg.,6-2,Otemachi 2-chome, Chiyoda-ku,Tokyo,100-0004 Japan
Keep safety first in your circuit designs!
* Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with app ropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
* These materials are intended as a reference to assist our custom ers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. * Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. * All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials , and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product informati on before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com ). * When using any or all of the information contained in these mate rials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. * Renesas Technology Corporation semiconductors are not designed or manuf actured for use in a device or system that is used under circums tances in which human life is potentially at stake. Please conta ct Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. * The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. * If these products or technologies are subject to the Japanese ex port control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a coun try other than the approved destination. * Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. * Please contact Renesas Technology Corporation for further details on these materials o r the products contained therein.
REJ03C0011 (c) 2003 Renesas Technology Corp. New publication, effective April 2003. Specifications subject to change without notice
www..com www..com 4U

▲Up To Search▲

Price & Availability of M6MGB321S8TP

	To Download M6MGB321S8TP Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .